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boost controller ap3039 data sheet 1 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 general description ap3039 is a current mode high voltage low-side n- channel mosfet controller which is ideal for boost regulators. it contains all th e features needed to imple- ment single ended primary topology dc/dc converters. the input voltage range of ap3039 is from 5v to 27v. its operation frequency is adjustable from 150khz to 1mhz. the ap3039 has uvlo (under voltage lock out) circuit. it uses two external resistors to set the uvlo voltage. the ap3039 also has an over output voltage protection to limit the output voltage. the ovp volt- age can be set through extern al resistors. if the output voltage is higher than the ovp high threshold point, it will disable the driver, when the output voltage drops to the ovp low threshold point, it will enable the driver. it also features a so ft start to reduce the inrush current when power on, the soft start time can be set through an exte rnal capacitor. the ap3039 is available in qfn-3x3-16 and soic-14 packages. features input voltage range 5v to 27v 0.6a peak mosfet gate driver 20ns quick mosfet gate driver duty cycle limit of 90% programmable uvlo programmable over voltage protection cycle by cycle current limit adjustable soft-start adjustable operation frequency from 150khz to 1mhz applications led lighting notebook lcd display modules figure 1. package types of ap3039 qfn-3x3-16 soic-14
boost controller ap3039 data sheet 2 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 ep 5678 13 14 15 16 1 2 3 49 10 11 12 pin 1 dot by marking figure 2. pin configuration of ap3039 (top view) pin configuration ( qfn-3x3-16 ) nc agnd out pgnd fn package vin rt vcc shdn ss uvlo en ov fb nc comp cs exposed pad 1 2 3 4 5 6 7 14 13 12 11 10 9 8 ( soic-14 ) m package uvlo ov en vin vcc out pgnd rt cs agnd shdn fb comp ss
boost controller ap3039 data sheet 3 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 pin number pin name function 16-pin 14-pin 13 enenable pin 2 4 vin input supply pin, mu st be locally bypassed 3, 12 nc no connection (for qfn-3x3-16 package only) 45 vcc 6v linear regulator output pin. vcc is used to bias the gate driver for the external mosfet. if v in is less than 8.5v, the v cc is equal to v in minus drop voltage across bypass switch. if v in is less than 6v, connect vcc to vi n. this pin should be bypassed to gnd (recommend to connect with agnd pin) with a ceramic capacitor 56 out connect this pin to the gate of external mo sfet, the gate driver has 0.6a peak current capability 6 7 pgnd power ground 7 8 rt an external resistor connected from this pin to gnd to set the operating frequency 8 9 cs sense switch current pin, which is used fo r current mode control and for current limit 9 10 agnd reference ground 10 11 shdn this pin can be connected to current matched chip and receiv es error signal used to shut down the system 11 12 fb voltage feedback pin. the reference voltage is 500mv 13 13 comp compensation pin. this pin is th e output of the internal error amplifier 14 14 ss an external soft start time ca pacitor is connected from this pin to ground and is charged by internal 12 a current source to control regulator soft start time 15 1 uvlo two resistors connected from this pin to grou nd and the vin pin respectively to set start up and shutdown level 16 2 ov over output voltage protection pin ep exposed backside pad. solder to the circ uit board ground plane with sufficient copper connection to ensure low thermal resistance (for qfn-3x3-16 package only) pin description
boost controller ap3039 data sheet 4 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 functional block diagram figure 3. functional block diagram of ap3039 ov agnd fb ss comp cs rt pgnd out vcc vin en uvlo shdn a (b) a qfn-3x3-16 b soic-14 reference s reference bypass switch regulator en logic leb osl ostd 1.25v 1.25v 22 p a 22 p a 1.25v 3v driver 110mv + 0.5v + ea 12 p a clk s r q clk saw saw 4 (5) 5 (6) 6 (7) 8 (9) 13 (13) 11 (12) 14 (14) 9 (10) 7 (8) 10 (11) 16 (2) 15 (1) 1 (3) 2 (4)
boost controller ap3039 data sheet 5 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 package temperature range part number marking id packing type qfn-3x3-16 -40 to 85 o c ap3039fntr-g1 b2a tape & reel soic-14 ap3039m-g1 3039m-g1 tube ap3039mtr-g1 3039m-g1 tape & reel bcd semiconductor's products, as designa ted with "g1" suffix in the part number, are rohs compliant and green. circuit type package fn: qfn-3x3-16 g1: green ap3039 - ordering information tr: tape and reel blank: tube m: soic-14
boost controller ap3039 data sheet 6 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating c onditions" is not implied. exposure to "absolute max- imum ratings" for extended periods may affect device reliability. parameter symbol min max unit input voltage v in 527v operating frequency f 150 1000 khz operating temperature t a -40 85 o c recommended oper ating conditions absolute maximum ratings (note 1) parameter symbol value unit input voltage v in 30 v vcc pin voltage v cc 10 v out pin voltage v out 10 v feedback pin voltage v fb 7v uvlo pin voltage v uvlo 7v cs pin voltage v cs 7v shdn pin voltage v shdn 7v enable pin voltage v en v in v ov pin voltage v ov 7v thermal resistance (junction to ambient, no heat sink) ja qfn-3 x3-16 60 o c/w soic-14 102 operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c esd (machine model) 200 v esd (human body model) 2000 v
boost controller ap3039 data sheet 7 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 parameter symbol conditions min typ max unit input voltage v in v cc =v in 56 v v cc bypassed to gnd through a 0.47 f capacitor 627 feedback voltage v fb 490 500 510 mv fb pin bias current i fb 35 100 na quiescent current i q no switching 3 5 ma shutdown quiescent current i shdn v en =0v 1 2 a vcc voltage v cc 9v v in 27v 5.566.5 v 6v v in <9v 5 vcc current limit i cc-lim 50 ma drop voltage across bypass switch v in -v cc i cc =0ma, f osc 200khz, 6v v in <8.5v 300 mv bypass switch turn-off threshold v byp-hi v in increasing 8.7 v bypass switch threshold hysteresis v byp-hys v in decreasing 260 mv vcc pin uvlo rising threshold v cc-hi 4.7 v vcc pin uvlo falling hysteresis v cc-hys 300 mv oscillator frequency f osc adjustable, r t =51k ? to 470k ? 150 1000 khz uvlo threshold v uvlo 1.22 1.25 1.28 v uvlo hysteresis current source i hys 22 a current limit threshold voltage v cs 90 110 130 mv rt voltage v rt 1.20 1.25 1.30 v error amplifier transconductance g s 470 a/v en pin threshold voltage v eh 2.0 v v el 0.5 shdn pin threshold voltage v ih 2.0 v v il 0.5 electrical characteristics (v in =12v, v en =v in , t a =25 o c, unless otherw ise specified.)
boost controller ap3039 data sheet 8 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 parameter symbol conditions min typ max unit ov threshold v ov 1.25 v ov hysteresis current source i ov-hys 22 a maximum duty cycle d max 90 93 % soft start current source i ss 12 a out pin rise time t rise out pin load =1nf 20 ns out pin fall time t fall out pin load =1nf 20 ns out dropout voltage (v cc -v out )v out-h i out =50ma 0.25 0.75 v out low voltage level (v out )v out-l i out =100ma 0.25 0.75 v thermal shutdown temperature t otsd 160 o c thermal shutdown hysteresis t hys 20 o c electrical characteristics (continued) (v in =12v, v en =v in , t a =25 o c, unless otherw ise specified.)
boost controller ap3039 data sheet 9 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 figure 6. efficiency vs. output current figure 7. efficiency vs. output voltage typical performance characteristics figure 4. efficiency vs. case temperature figure 5. efficiency vs. input voltage 6 9 12 15 18 21 24 27 85 86 87 88 89 90 91 92 93 94 95 i out =160ma, v out =33v, t a =25 o c l=22 h, c in =10 f; c out =10 f f osc =400khz f osc = 1mhz input voltage (v) efficiency (%) -50 -25 0 25 50 75 100 125 85 86 87 88 89 90 91 92 93 94 95 v in =12v, v out =33v, f osc =1mhz l=22 h, c in =10 f, c out =10 f efficiency (%) temperature ( o c) i out =160ma i out = 200ma 20 40 60 80 100 120 140 160 180 200 60 65 70 75 80 85 90 95 v in =12v, v out =33v, f osc =1mhz, t a =25 o c l=22 h, c in =10 f, c out =10 f output current (ma) efficiency (%) 16 18 20 22 24 26 28 30 32 34 89.0 89.5 90.0 90.5 91.0 91.5 92.0 v in =12v, v out =33v, f osc =1mhz, t a =25 o c l=22 h, c in =10 f, c out =10 f output voltage (v) efficiency (%)
boost controller ap3039 data sheet 10 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 typical performance ch aracteristics (continued) figure 8. quiescent current vs. input voltage figure 9. vcc voltage vs. input voltage 6 9 12 15 18 21 24 27 5.5 5.6 5.7 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5 -50 o c 25 o c 85 o c 125 o c input voltage (v) vcc voltage (v) figure 10. switching frequency vs. case temperature -50 -25 0 25 50 75 100 125 0.90 0.95 1.00 1.05 1.10 1.15 1.20 r t =51k ? case temperature ( o c) frequency (mhz) figure 11. switching frequency vs. r t value 40 80 120 160 200 240 280 320 360 400 440 480 100 200 300 400 500 600 700 800 900 1000 1100 1200 r t (k ? ) frequency (khz) 5 1015202530 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 o c 25 o c 85 o c 125 o c input voltage (v) quiescent current (ma)
boost controller ap3039 data sheet 11 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 figure 14. ov voltage vs. input voltage figure 15. uvlo curr ent vs. input voltage typical performance ch aracteristics (continued) figure 12. rt voltage vs. input voltage figure 13. uvlo voltage vs. input voltage 5 1015202530 1.20 1.21 1.22 1.23 1.24 1.25 1.26 1.27 1.28 1.29 1.30 -50 o c 25 o c 85 o c 125 o c input voltage (v) rt voltage (v) 5 1015202530 1.230 1.235 1.240 1.245 1.250 1.255 1.260 -50 o c 25 o c 85 o c 125 o c uvlo voltage (v) input voltage (v) 5 1015202530 1.230 1.235 1.240 1.245 1.250 1.255 1.260 1.265 1.270 1.275 1.280 -40 o c 25 o c 85 o c 125 o c ov voltage (v) input voltage (v) 5 1015202530 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0 -40 o c 25 o c 85 o c 125 o c uvlo current ( a ) input voltage (v)
boost controller ap3039 data sheet 12 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 figure 18. out low voltage vs. case temperature figure 19. out dropout voltage vs. case temperature typical performance ch aracteristics (continued) figure 16. ov current vs. input voltage figure 17. feedback voltage vs. case temperature -50 -25 0 25 50 75 100 125 0.490 0.492 0.494 0.496 0.498 0.500 0.502 0.504 0.506 0.508 0.510 fb voltage (v) case temperature ( o c) -50 -25 0 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 out low voltage (mv) temperature ( o c) -50 -25 0 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 out dropout voltage (mv) case temperature ( o c) 5 1015202530 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0 -50 o c 25 o c 85 o c 125 o c ov current ( a ) input voltage (v)
boost controller ap3039 data sheet 13 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 application information operation ap3039 is a boost dc-dc controller with adjustable operation frequency. current mode control scheme provides excellent line and load regulation. operation can be best understood by referring to figure 3. at the start of each oscillator cycle, the sr latch is set and external power switch q1 (see figure 20) turns on and the switch current wi ll increase linearly. the voltage on external sense resistor r cs (see figure 20), connected from cs pin to gnd, is proportional to the switch current. this voltage is added to a stabilizing ramp and the result is fed into the non-inversion input of the pwm comparator. wh en this non-inversion input voltage exceeds invers ion input voltage of pwm comparator which is the output voltage of the error amplifier ea, the sr latch is reset and the external power switch turns off. the voltage level at inversion input of pwm comparator sets the peak current level to keep the output voltage in regulation. this voltage level is the amplified signa l of the voltage difference between feedback voltage and reference voltage of 0.5v. so, a constant output current can be provided by this operation mode. input under-voltage detector ap3039 contains an under voltage lock out (uvlo) circuit. two resistors r1 and r2 are connected from uvlo pin to ground and vin pin respectively (see figure 20). the resistor divider must be designed such that the voltage on the uvlo pin is higher than 1.25v when vin is in the desired operating range. if the voltage on the pin is below under voltage threshold, all functions of ap3039 are disabled, but the system will remain in a low power standby state. uvlo hysteresis is accomplished through an internal 22 p a current source which switched on or off 22 p a current into the impedance of the set-point divider. when the uvlo threshold is exceeded, the current source is activated to instantly raise the voltage on the uvlo pin. when the uvlo pin voltage falls below the threshold the current source is turned off, causing the voltage on the uvlo pin to fall. the formula for uvlo can be expresses as blow: for input threshold voltage v in_threshold =1.25v*(r1+r2)/r2 for input hysteresis voltage v in-hysteresis =22 p a*r1 o ver voltage protection ap3039 has an over voltage protection (ovp) circuit. the ov pin is connected to the center tap of r3 and r4 resistor voltage-divider from the high voltage output to gnd (see figure 20). when the loop is open or the output voltage becomes excessive in any case, result the voltage on ov pin exceed s 1.25v, all functions of ap3039 will be disabled, and the output voltage will fall. ovp hysteresis is accomp lished with an internal 22 p a current source and the operation mode is the same as uvlo. the formula for ovp can be expresses as blow: for ovp voltage v ovp =1.25v*(r3+r4)/r4 for ovp hysteresis voltage v ovp-hysteresis =22 p a*r3 frequency selection an external resistor r t , connected from rt pin to gnd, is used to set the operating frequency (see figure 20). operation frequency range is from 150khz to 1mhz (see table 1). high frequency operation optimizes the regulator for the smallest component size, while low frequency operation can reduce the switch losses. table 1. frequency selection resistance of r t (k : ) operating frequency (khz) 470 150 390 200 147 400 95 600 68 800 51 1000
boost controller ap3039 data sheet 14 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 application information (continued) soft start ap3039 has a soft start circuit to limit the inrush current during startup. th e time of soft start is controlled by an internal 12 a current source and an external soft start capacitor c ss connected from ss pin to gnd (see figure 20). the effective c ss voltage for soft start is from 0 to 2.3v, the time of soft start is: t ss = c ss *2.3v/12 a vcc pin application description the ap3039 includes an internal low dropout linear regulator with the output pin vcc. this pin is used to power internal pwm contro ller, control logic and mosfet driver. on the condition that v in 8.5v, the regulator generates a 6v supply. if 6v v in 8.5v, the v cc is equal to v in minus drop voltage across bypass switch. when v in is less than 6v, connect vcc to vin. typical application figure 20. application circui t 1 of ap3039 (note 2) out cs ov vin uvlo rt ss comp shdn en fb gnd c in r c c c r t r2 r1 off on c ss r3 r cs r4 c out off on 9 ,1 9wr9 9&& c v u1 ap3039 q1 d1 r5 r6 l v out
boost controller ap3039 data sheet 15 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 typical applicat ion (continued) figure 21. application circuit 2 of ap3039 (drivi ng single 1w or 3w led lighting, note 3) figure 22. application circuit 3 of ap3039 (backlight driver, note 4) out cs ov vin uvlo rt ss comp shdn en fb gnd c in r c c c r t r3 r cs r4 v in :6v to 27v vcc c ss q1 l c out d1 r1 r2 u1 ap3039 r5 1w or 3w led c v off on on off out cs ov vin uvlo rt ss comp shdn en fb gnd c in r c c c r t r3 r cs r4 v in :6v to 27v vcc c ss q1 l c out d1 r1 r2 u 1 ap3039 c v off on on off r5
boost controller ap3039 data sheet 16 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 typical applicat ion (continued) note 2: the output voltage is decided by r5, r6 and the internal 0.5v reference. the output voltage accuracy is determined by the accuracy of r5 and r6, for which the precise resi stors are preferred. v out = note 3: in this application, the led current is contro lled by the feedback resistor r5. leds current accuracy is determined by regulator ? s feedback threshold accuracy a nd is independent of the leds ? forward voltage variation. so the precise resistors are the better choices. the resistance of r5 is in inverse proportion to the led current since the feedback reference is fixed at 0.5v. the relation of r5 and the le d current can be expressed as below: r5= note 4: the summation of led current is determined by r5 and internal 0.5v reference same as the illustration in figure 22. more detailed application information please refer to application note. () r6 r5 * r6 0.5v + led i 0.5v
boost controller ap3039 data sheet 17 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 qfn-3x3-16 mechanical dimensions unit: mm(inch) 0 . 7 0 0 ( 0 . 0 2 8 ) 0 . 9 0 0 ( 0 . 0 3 5 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0 . 0 5 0 ( 0 . 0 0 2 ) 0 . 1 7 8 ( 0 . 0 0 7 ) 0 . 2 2 8 ( 0 . 0 0 9 ) 0 . 1 8 0 ( 0 . 0 0 7 ) 0 . 2 8 0 ( 0 . 0 1 1 ) b s c 0 . 5 0 0 ( 0 . 0 2 0 ) 1 . 7 0 0 ( 0 . 0 6 8 ) r e f 1 . 7 0 0 ( 0 . 0 6 8 ) r e f 0 . 5 0 0 ( 0 . 0 2 0 ) 0 . 3 0 0 ( 0 . 0 1 2 ) b o t t o m v i e w e x p o s e d p a d p i n 1 i d e n t i f i c a t i o n p i n 1 i d e n t i f i c a t i o n 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 ) 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 ) p i n 1
boost controller ap3039 data sheet 18 bcd semiconductor manufacturing limited jun. 2010 rev. 1. 6 mechanical dimens ions (continued) soic-14 unit: mm(inch) note: eject hole, oriented hole and mold mark is optional. 8.550(0.337) 1.350(0.053) 7 7 0.700(0.028) 0.100(0.004) 0 . 2 5 0 ( 0 . 0 1 0 ) 0.500(0.020) 1 r0.200(0.008) 20:1 a 0.280(0.011) 45 8 a 8 0 . 1 9 0 ( 0 . 0 0 7 ) 9 . 5 8 0 8 depth 0.060(0.002) 0.100(0.004) 2.000(0.079) 1.270(0.050) 1.000(0.039) 1 . 3 0 0 ( 0 . 0 5 1 ) 5 . 8 0 0 ( 0 . 2 2 8 ) 8.750(0.344) 0.250(0.010) 1 . 7 5 0 ( 0 . 0 6 9 ) 0 . 2 5 0 ( 0 . 0 1 0 ) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 6 . 2 0 0 ( 0 . 2 4 4 ) 0.600(0.024) 5 r0.200(0.008) 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) m i n 0.480(0.019) 45
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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